| Sign In | Join Free | My china-telecommunications.com | 
 | 
Brand Name : SAIKELI
Model Number : MJE3055T
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, L/C
Supply Ability : 5000
Delivery Time : 3-4works day
Packaging Details : Reel/Tube/Tray/Box
Catalog : Triode (BJT)
Collector Current IC : 10 Adc
Mounting Type : standard, Surface Mount
Packing : Reel/Tube/Tray/Box
Base Current IB : 6.0 Adc
Installation type : through-hole
working temperature : −55 to +150 °C
MJE3055T TO-220 Complementary Silicon Plastic Power Transistors
Description
  10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS
There are two limitations on the power handling ability of
  a transistor: average junction temperature and second
  breakdown. Safe operating area curves indicate IC − VCE
  limits of the transistor that must be observed for reliable
  operation; i.e., the transistor must not be subjected to greater
  dissipation than the curves indicate
Shipping:
1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS.
The packaging is very safe and strong. Please nitfy me you have any special needs
  2, It will take around 3-5 days to reach your hands.
Product Type & condition:
  Because of the fluctuant sales situation. the stock parts are always changing and the stock list cannot be promptly updated.
So please consult the stock situation when you inquire.
Buyer Reading:
  1. Please confirm receipt of products if the items you received,
and if the goods was damaged please contact us immediately. send the photo to us that we can check and give you best solution
2. We only guarantee delivery in time but we couldn't control the express delivery time. Our related sales person will be responsible to send the AWB for the delivered goods in the next workday. you can check the AWB in the website which we send to you. For the AWB you also can call to the local branch of the express company in your company.
Pre-sales service :
1. Our team design and make solutions based on different requirements from different customers.
2. We provide 24-hours service,and every message you quote inquiry will be replied within 12 hours


Features
  • High Current Gain − Bandwidth Product
  • These Devices are Pb−Free and are RoHS Compliant*
  MAXIMUM RATINGS
  Rating Symbol Value Unit
  Collector−Emitter Voltage VCEO 60 Vdc
  Collector−Base Voltage VCB 70 Vdc
  Emitter−Base Voltage VEB 5.0 Vdc
  Collector Current IC 10 Adc
  Base Current IB 6.0 Adc
  Total Device Dissipation
  @ TC = 25°C
  Derate above 25°C
  PD (Note 1) 75 0.6W
  W/°C Operating and Storage Junction
  Temperature RangeTJ, Tstg −55 to +150 °
   
  FAQ:
  Q1. What is the order process?
  A: First we discuss the order details and production details via email or TM. Then we will send youa PI for
  your confrmation. After we received the payment, we began processing the order.
  Q2. How do I place an order?
  A: You can contact us by email to find out your order details or place an order online.
  Q3. How do I pay you?
  A: After confirming our PI, we will ask you to pay.
  Q4. How is your delivery time?
  A: Under normal circumstances, the goods will be shipped within 3-5 working days after receiving the
  payment, and finally depends on the order quantity.
  Q5. Do you test all the goods before delivery?
  A: Yes, we have 100% test before delivery.

|   | 
| MJE3055T TO-220 Complementary Silicon Plastic Power Transistors Images | 
 SM0805HC 0805 Led induction bulb led other lighting driving electronic
                                                                                    
                        
                        
                        
                                                            SM0805HC 0805 Led induction bulb led other lighting driving electronic
                                                    
                        
                     CR95HF-VMD5T QFN-32-EP(5x5) RF card chip integrated circuit
                                                                                    
                        
                        
                        
                                                            CR95HF-VMD5T QFN-32-EP(5x5) RF card chip integrated circuit
                                                    
                        
                     M24LR04E-RDW6T/2 TSSOP-8-3mm RF card chip integrated circuit
                                                                                    
                        
                        
                        
                                                            M24LR04E-RDW6T/2 TSSOP-8-3mm RF card chip integrated circuit
                                                    
                        
                     L9333MD-TR SOIC-20-300mil Power electronic switch integrated circuit
                                                                                    
                        
                        
                        
                                                            L9333MD-TR SOIC-20-300mil Power electronic switch integrated circuit
                                                    
                        
                     SI4438-B1C-FMR RF Power Transistor - High Performance Reliable Power Output
                                                                                    
                        
                        
                        
                                                            SI4438-B1C-FMR RF Power Transistor - High Performance Reliable Power Output
                                                    
                        
                     SI4438-C2A-GMR RF Power Transistor - High Performance High Efficiency
                                                                                    
                        
                        
                        
                                                            SI4438-C2A-GMR RF Power Transistor - High Performance High Efficiency
                                                    
                        
                     SI4355-B1A-FMR RF Power Transistor - High Efficiency And Reliability
                                                                                    
                        
                        
                        
                                                            SI4355-B1A-FMR RF Power Transistor - High Efficiency And Reliability
                                                    
                        
                     SI4010-C2-GTR RF Power Transistor - High Power Output And Stability
                                                                                    
                        
                        
                        
                                                            SI4010-C2-GTR RF Power Transistor - High Power Output And Stability
                                                    
                        
                     SI4031-B1-FMR RF Power Transistors - High Frequency And High Power
                                                                                    
                        
                        
                        
                                                            SI4031-B1-FMR RF Power Transistors - High Frequency And High Power
                                                    
                        
                     SI4703-C19-GMR RF Power Transistor - Compact High Efficiency And Reliable
                                                                                    
                        
                        
                        
                                                            SI4703-C19-GMR RF Power Transistor - Compact High Efficiency And Reliable